IXFA110N15T2 - IXYS Corporation

IXFA110N15T2 Power MOSFET

Preliminary Technical Information TrenchT2TM HiperFET Power MOSFET IXFA110N15T2 IXFP110N15T2 VDSS = ID25 = RDS(on)  150V 110A 13m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maxim.

Features

 International standard packages
 175°C Operating Temperature
 High current handling capability
 Fast intrinsic Rectifier
 Dynamic dV/dt rated
 Low RDS(on) Advantages
 Easy to mount
 Space savings
 High power density Applications
 DC-DC converters
 Battery chargers
 Switched-mode and resonant-mode power supplies
 DC choppers
 AC motor drives
 Uninterruptible power supplies
 High speed power switching applications © 2018 IXYS CORPORATION, All rights reserved DS100093A(11/18) Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs VDS = 10V, ID = 55A, Note 1 Ci.