IXFA12N50P - IXYS Corporation

IXFA12N50P Polar MOSFETs

Advance Technical Information IXFA 12N50P IXFP 12N50P PolarHVTM Power www.DataSheet4U.com MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA 12N50P IXFP 12N50P VDSS ID25 RDS(on) trr = 500 = 12 ≤ 0.5 ≤ 200 V A Ω ns Symbol VDSS VDGR VGSM VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150.

Features

z z 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque TO-220 TO-263 (TO-220) 300 260 1.13/10 Nm/lb.in. 4 3 g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 1 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.0 5.5 ±100 5 150 V V nA μA μA z z z Easy to mount Space savings High powe.