IXFA12N65X2 - IXYS

IXFA12N65X2 Power MOSFET

X2-Class HiPERFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA12N65X2 IXFP12N65X2 IXFH12N65X2 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 650 V 650 V 30 V 40 V TC = 25C TC = 25C, Puls.

Features

 International Standard Packages
 Low RDS(ON) and QG
 Avalanche Rated
 Low Package Inductance Advantages
 High Power Density
 Easy to Mount
 Space Savings Applications
 Switch-Mode and Resonant-Mode Power Supplies
 DC-DC Converters
 PFC Circuits
 AC and DC Motor Drives
 Robotics and Servo Controls DS100749B(6/18) IXFA12N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5
• ID25, Note 1 RGi Gate Input Resistance Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz Co(er) Co(tr) Effective Output Capacitance Energy related Time related VGS.