IXFA102N15T - IXYS Corporation

IXFA102N15T Power MOSFET

Trench Gate Power MOSFET HiperFETTM N-Channel Enhancement Mode Avalanche Rated IXFA102N15T IXFH102N15T IXFP102N15T VDSS ID25 RDS(on) trr = 150V = 102A ≤ 18mΩ ≤ 120ns TO-263 (IXFA) G S (TAB) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC www.DataSheet4U.net Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C RG.

Features

z z (TO-220 & TO-247) 1.13 / 10 (TO-263) 10..65 / 2.2..14.6 2.5 3.0 6.0 International Standard Packages Avalanche Rated Weight Advantages z z z Easy to Mount Space Savings High Power Density Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 1mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C Characteristic Values Min. Typ. Max. 150 2.5 5.0 V V Applications z z z ± 200 nA 5 μA 750 μ A 18 mΩ z z z z VGS = 10V, ID = 0.5
• ID25, Note 1 DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode .