High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N160 G IC25 = 7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ans 1 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Cies Q Gon V F RthJC Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 10/0 V; .
• High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10 V turn on gate voltage - fast switching for high frequency operation - reverse conduction capability
• ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline
Applications
• switched mode power supplies
• DC-DC converters
• resonant converters
• lamp ballasts
• laser generators, x ray generators
064.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXBF9N160 |
IXYS Corporation |
High Voltage BIMOSFET | |
2 | IXBF9N160 |
IXYS Corporation |
Power MOSFET | |
3 | IXBF9N140 |
IXYS Corporation |
High Voltage BIMOSFET | |
4 | IXBF9N140 |
IXYS Corporation |
Power MOSFET | |
5 | IXBF12N300 |
IXYS |
Monolithic Bipolar MOS Transistor | |
6 | IXBF40N160 |
IXYS |
High Voltage BIMOSFET | |
7 | IXBF55N300 |
IXYS |
Monolithic Bipolar MOS Transistor | |
8 | IXBD4410 |
IXYS Corporation |
(IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset | |
9 | IXBD4411 |
IXYS Corporation |
(IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset | |
10 | IXBH10N170 |
IXYS Corporation |
High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor | |
11 | IXBH12N300 |
IXYS |
Bipolar MOS Transistor | |
12 | IXBH15N140 |
IXYS Corporation |
(IXBH15N140 / IXBH15N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |