Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT12N300 IXBH12N300 VCES = IC110 = VCE(sat) ≤ 3000V 12A 3.2V Symbol VCES VCGR VGES VGEM IC25 IICCM110 SSOA (RBSOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TTCC = 110°C = 25°C, 1ms VGE = 15V,.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXBH10N170 |
IXYS Corporation |
High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor |
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| 2 | IXBH15N140 |
IXYS Corporation |
(IXBH15N140 / IXBH15N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |
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| 3 | IXBH15N160 |
IXYS Corporation |
(IXBH15N140 / IXBH15N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |
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| 4 | IXBH16N170 |
IXYS |
BIMOSFET Monolithic Bipolar MOS Transistor |
|
| 5 | IXBH16N170A |
IXYS Corporation |
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor |
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| 6 | IXBH20N360HV |
IXYS |
Monolithic Bipolar MOS Transistor |
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| 7 | IXBH40N140 |
IXYS Corporation |
(IXBH40N140 / IXBH40N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor - N-Channel |
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| 8 | IXBH40N160 |
IXYS |
Monolithic Bipolar MOS Transistor |
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| 9 | IXBH42N170 |
IXYS Corporation |
Monolithic Bipolar MOS Transistor |
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| 10 | IXBH42N170A |
IXYS Corporation |
Monolithic Bipolar MOS Transistor |
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| 11 | IXBH5N160G |
IXYS |
High Voltage BIMOSFET |
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| 12 | IXBH6N170 |
IXYS |
BIMOSFET Monolithic Bipolar MOS Transistor |
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