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IXBF9N160G |
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| Part Number | IXBF9N160G |
| Manufacturer | IXYS |
| Description | High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N160 G IC25 = 7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ans 1 5 IGBT Symbol VCES VGES IC25 IC90 ICM ... |
| Features |
• High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10 V turn on gate voltage - fast switching for high frequency operation - reverse conduction capability • ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline Applications • switched mode power supplies • DC-DC converters • resonant converters • lamp ballasts • laser generators, x ray generators 064... |
| Document |
 IXBF9N160G Data Sheet
PDF 77.57KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXBF9N160 |
IXYS Corporation |
High Voltage BIMOSFET |
|
| 2 | IXBF9N160 |
IXYS Corporation |
Power MOSFET |
|
| 3 | IXBF9N140 |
IXYS Corporation |
High Voltage BIMOSFET |
|
| 4 | IXBF9N140 |
IXYS Corporation |
Power MOSFET |
|
| 5 | IXBF12N300 |
IXYS |
Monolithic Bipolar MOS Transistor |
|