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IXBF40N160 |
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| Part Number | IXBF40N160 |
| Manufacturer | IXYS |
| Description | High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 40N160 IC25 = 28 A VCES = 1600 V VCE(sat) = 6.2 V tf = 40 ns 1 5 IGBT Symbol VCES VGES IC25 IC90 ICM V... |
| Features |
• High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability • ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline Applications • switched mode power supplies • DC-DC converters • resonant converters • lamp ballasts • laser generators, x ray generators 0648 IXYS reserves the right to change limits, test cond... |
| Document |
 IXBF40N160 Data Sheet
PDF 81.62KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXBF12N300 |
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Monolithic Bipolar MOS Transistor |
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| 2 | IXBF55N300 |
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Monolithic Bipolar MOS Transistor |
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| 3 | IXBF9N140 |
IXYS Corporation |
High Voltage BIMOSFET |
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| 4 | IXBF9N140 |
IXYS Corporation |
Power MOSFET |
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| 5 | IXBF9N160 |
IXYS Corporation |
High Voltage BIMOSFET |
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