IRL610A - Fairchild Semiconductor

IRL610A Advanced Power MOSFET

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON):1.185Ω (Typ.) 1 2 3 IRL610A BVDSS = 200 V RDS(on) = 0.046Ω ID = 3.3 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum.

Features

♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON):1.185Ω (Typ.) 1 2 3 IRL610A BVDSS = 200 V RDS(on) = 0.046Ω ID = 3.3 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Re.