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IRL610A |
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| Part Number | IRL610A |
| Manufacturer | Fairchild Semiconductor |
| Description | $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µ... |
| Features |
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON):1.185Ω (Typ.)
1 2 3
IRL610A
BVDSS = 200 V RDS(on) = 0.046Ω ID = 3.3 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Re... |
| Document |
 IRL610A Data Sheet
PDF 239.52KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRL610 |
Fairchild Semiconductor |
Power MOSFET |
|
| 2 | IRL610S |
Fairchild Semiconductor |
Power MOSFET |
|
| 3 | IRL60B216 |
International Rectifier |
Power MOSFET |
|
| 4 | IRL60B216 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRL60HS118 |
Infineon |
MOSFET |
|