IRL60B216 - International Rectifier

IRL60B216 Power MOSFET

Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters StrongIRFET™ IRL60B216 HEXFET® Power MOSFET D VD.

Features

= 25°C 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com © 2015 International Rectifier 315 Limited By Package 270 225 180 135 90 45 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback October 9, 2015 IRL60B216 Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continu.