IRL60HS118 Target Applications Wireless charging Adapter Telecom Benefits Higher power density designs Higher switching frequency Uses OptiMOSTM5 Chip Reduced parts count wherever 5V supplies are available Driven directly from microcontrollers (slow switching) System cost reductions Typical values (unless otherwise specified) VDSS 60V mi.
gure 1 Typical On-Resistance vs. Gate Voltage Figure 2 Typical On-Resistance vs. Drain Current Final Datasheet www.infineon.com Please read the important Notice and Warnings at the end of this document V2.2 2019-12-13 IRL60HS118 Table of Contents Table of Contents Target Applications …..……..……..………………………………………………………………………...……1 Benefits …..………………………………………………………………………...……………..…………….1 Ordering Table ….……………………………………………………………………………………………………1 Table of Contents ….………………………………………………………………………………………………...2 1 Parameters ………………………………………………………………………………………………3 2 Maximum ratings, Thermal, and .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRL60B216 |
International Rectifier |
Power MOSFET | |
2 | IRL60B216 |
INCHANGE |
N-Channel MOSFET | |
3 | IRL60S216 |
Infineon |
IR MOSFET | |
4 | IRL60S216 |
INCHANGE |
N-Channel MOSFET | |
5 | IRL60SL216 |
Infineon |
IR MOSFET | |
6 | IRL610 |
Fairchild Semiconductor |
Power MOSFET | |
7 | IRL610A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
8 | IRL610S |
Fairchild Semiconductor |
Power MOSFET | |
9 | IRL620 |
Fairchild Semiconductor |
Power MOSFET | |
10 | IRL620 |
Vishay |
Power MOSFET | |
11 | IRL620 |
International Rectifier |
POWER MOSFET | |
12 | IRL620A |
Fairchild Semiconductor |
Advanced Power MOSFET |