IRL60SL216 - Infineon

IRL60SL216 IR MOSFET

Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters IR MOSFET StrongIRFET™ IRL60S216 IRL60SL216 HEXFET.

Features

in-to -Source On Resistance (m) ID, Drain Current (A) 6 ID = 100A 5 4 TJ = 125°C 3 2 1 TJ = 25°C 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 315 270 225 180 135 90 45 0 25 Limited By Package 50 75 100 125 150 TC , Case Temperature (°C) 175 Fig 2. Maximum Drain Current vs. Case Temperature 2016-1-19   IRL60S/SL216 Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Lim.