$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON):1.185Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-t.
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON):1.185Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt (3) To.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRL610A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
2 | IRL610S |
Fairchild Semiconductor |
Power MOSFET | |
3 | IRL60B216 |
International Rectifier |
Power MOSFET | |
4 | IRL60B216 |
INCHANGE |
N-Channel MOSFET | |
5 | IRL60HS118 |
Infineon |
MOSFET | |
6 | IRL60S216 |
Infineon |
IR MOSFET | |
7 | IRL60S216 |
INCHANGE |
N-Channel MOSFET | |
8 | IRL60SL216 |
Infineon |
IR MOSFET | |
9 | IRL620 |
Fairchild Semiconductor |
Power MOSFET | |
10 | IRL620 |
Vishay |
Power MOSFET | |
11 | IRL620 |
International Rectifier |
POWER MOSFET | |
12 | IRL620A |
Fairchild Semiconductor |
Advanced Power MOSFET |