IRL1104PbF - International Rectifier

IRL1104PbF Power MOSFET

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for .

Features

n Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Thermal Resistance Parameter RθJC RθCS RθJA www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient PD - 95404 IRL1104PbF HEXFET® Power MOSFET D VDSS = 40V G RDS(on) = 0.008Ω S ID = 104A… TO-22.