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IRL1104PbF |
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| Part Number | IRL1104PbF |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with th... |
| Features |
n Current, VGS @ 10V Pulsed Drain Current Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TJ TSTG
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
RθJC RθCS RθJA
www.irf.com
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
PD - 95404
IRL1104PbF
HEXFET® Power MOSFET
D
VDSS = 40V
G RDS(on) = 0.008Ω S ID = 104A
TO-22... |
| Document |
 IRL1104PbF Data Sheet
PDF 159.92KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRL1104 |
International Rectifier |
HEXFET Power MOSFET |
|
| 2 | IRL1104L |
International Rectifier |
POWER MOSFET |
|
| 3 | IRL1104LPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 4 | IRL1104S |
International Rectifier |
POWER MOSFET |
|
| 5 | IRL1104SPBF |
International Rectifier |
HEXFET Power MOSFET |
|