IRL1004PBF - International Rectifier

IRL1004PBF Power MOSFET

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable.

Features

Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RθJC RθCS RqJA www.irf.com Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient G PD - 95403 IRL1004PbF HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 0.0065Ω ID = 130A… S .