IRL1004S - International Rectifier

IRL1004S HEXFET Power MOSFET

l l HEXFET® Power MOSFET D VDSS = 40V G S RDS(on) = 0.0065Ω ID = 130A… Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know.

Features

al connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL1004L) is available for lowprofile application. D2Pak IRL1004S TO-262 IRL1004L Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V† Continuous Drain Current, VGS @ 10V† Pulsed Drain Current † Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy† Avalanche Current Repetitive Avalanche Energy Peak Dio.