l IRL1104SPbF IRL1104LPbF HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 0.008Ω G ID = 104A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are w.
e of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL1104L) is available for lowprofile applications. D 2 Pak TO-262 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Pea.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRL1104L |
International Rectifier |
POWER MOSFET | |
2 | IRL1104 |
International Rectifier |
HEXFET Power MOSFET | |
3 | IRL1104PbF |
International Rectifier |
Power MOSFET | |
4 | IRL1104S |
International Rectifier |
POWER MOSFET | |
5 | IRL1104SPBF |
International Rectifier |
HEXFET Power MOSFET | |
6 | IRL1004 |
International Rectifier |
HEXFET Power MOSFET | |
7 | IRL1004 |
INCHANGE |
N-Channel MOSFET | |
8 | IRL1004L |
International Rectifier |
HEXFET Power MOSFET | |
9 | IRL1004LPBF |
International Rectifier |
Power MOSFET | |
10 | IRL1004PBF |
International Rectifier |
Power MOSFET | |
11 | IRL1004S |
International Rectifier |
HEXFET Power MOSFET | |
12 | IRL1004S |
INCHANGE |
N-Channel MOSFET |