IRL1104 - International Rectifier

IRL1104 HEXFET Power MOSFET

q D VDSS = 40V G S RDS(on) = 0.008Ω ID = 104A… Fifth Generation HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides .

Features

meter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 104… 74 416 167 1.1 ±16 340 62 17 5.0 -55 to + 175 300 (1.6mm from case) 10 lbf
•in (1.1N
•m) Units A W W/°C V mJ A mJ V/n.