IRL1004S |
Part Number | IRL1004S |
Manufacturer | International Rectifier |
Description | l l HEXFET® Power MOSFET D VDSS = 40V G S RDS(on) = 0.0065Ω ID = 130A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extreme... |
Features |
al connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL1004L) is available for lowprofile application.
D2Pak IRL1004S
TO-262 IRL1004L
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Dio... |
Document |
IRL1004S Data Sheet
PDF 155.43KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IRL1004 |
International Rectifier |
HEXFET Power MOSFET | |
2 | IRL1004 |
INCHANGE |
N-Channel MOSFET | |
3 | IRL1004L |
International Rectifier |
HEXFET Power MOSFET | |
4 | IRL1004LPBF |
International Rectifier |
Power MOSFET | |
5 | IRL1004PBF |
International Rectifier |
Power MOSFET |