IRG4RC10SD - International Rectifier

IRG4RC10SD INSULATED GATE BIPOLAR TRANSISTOR

PD-91678B IRG4RC10SD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Standard Speed CoPack IGBT Features C • Extremely low voltage drop 1.1V(typ) @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Tight parameter distribution • IGBT co-packaged with HE.

Features

C
• Extremely low voltage drop 1.1V(typ) @ 2A
• S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
• Tight parameter distribution
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-252AA package G E n-channel VCES = 600V VCE(on) typ. = 1.10V @VGE = 15V, IC = 2.0A Benefits
• Generation 4 IGBT's offer highest efficiencies available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance wi.