IRG4RC10SD |
Part Number | IRG4RC10SD |
Manufacturer | International Rectifier |
Description | PD-91678B IRG4RC10SD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Standard Speed CoPack IGBT Features C • Extremely low voltage drop 1.1V(typ) @ 2A • S-Series: Minimizes ... |
Features |
C
• Extremely low voltage drop 1.1V(typ) @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Tight parameter distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-252AA package G E n-channel VCES = 600V VCE(on) typ. = 1.10V @VGE = 15V, IC = 2.0A Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance wi... |
Document |
IRG4RC10SD Data Sheet
PDF 722.35KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | IRG4RC10S |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | IRG4RC10SDPBF |
International Rectifier |
Standard Speed CoPack IGBT | |
3 | IRG4RC10K |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTO | |
4 | IRG4RC10KD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTO | |
5 | IRG4RC10KDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTO |