IRG4RC10KDPBF - International Rectifier

IRG4RC10KDPBF INSULATED GATE BIPOLAR TRANSISTO

PD - 95035 IRG4RC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packa.

Features

VCES = 600V G E VCE(on) typ. = 2.39V @VGE = 15V, IC = 5.0A n-channel Benefits Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
• Latest generation 4 IGBT's offer highest power density motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses
• For hints see design tip 97003 Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Ind.