PD 91736A IRG4RC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-.
• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-252AA package
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
G E
VCE(on) typ. = 2.39V
@VGE = 15V, IC = 5.0A
n-ch an nel
Benefits
• Latest generation 4 IGBT's offer highest power density motor controls .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRG4RC10K |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTO | |
2 | IRG4RC10KDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTO | |
3 | IRG4RC10KPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTO | |
4 | IRG4RC10S |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
5 | IRG4RC10SD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
6 | IRG4RC10SDPBF |
International Rectifier |
Standard Speed CoPack IGBT | |
7 | IRG4RC10U |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
8 | IRG4RC10UD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
9 | IRG4RC10UDPBF |
International Rectifier |
UltraFast CoPack IGBT | |
10 | IRG4RC10UPBF |
International Rectifier |
UltraFast speed IGBT | |
11 | IRG4RC20F |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
12 | IRG4RC20FPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |