PD 95389 IRG4RC10KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-252AA package • Lead-Free C Short Circuit Rated UltraFast IGBT.
• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides higher efficiency than Generation 3
• Industry standard TO-252AA package
• Lead-Free
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
G E
VCE(on) typ. = 2.39V
@VGE = 15V, IC = 5.0A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
D-PAK TO-252AA
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRG4RC10K |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTO | |
2 | IRG4RC10KD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTO | |
3 | IRG4RC10KDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTO | |
4 | IRG4RC10S |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
5 | IRG4RC10SD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
6 | IRG4RC10SDPBF |
International Rectifier |
Standard Speed CoPack IGBT | |
7 | IRG4RC10U |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
8 | IRG4RC10UD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
9 | IRG4RC10UDPBF |
International Rectifier |
UltraFast CoPack IGBT | |
10 | IRG4RC10UPBF |
International Rectifier |
UltraFast speed IGBT | |
11 | IRG4RC20F |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
12 | IRG4RC20FPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |