PD - 95192A IRG4RC10SDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.1V(typ) @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Tight parameter distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft.
• Extremely low voltage drop 1.1V(typ) @ 2A
• S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
• Tight parameter distribution
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-252AA package
• Lead-Free
C
Standard Speed CoPack IGBT
VCES = 600V
G E
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 2.0A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiencies available
• IGBT's optimized for specific application conditions
• HEXF.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRG4RC10SD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | IRG4RC10S |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | IRG4RC10K |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTO | |
4 | IRG4RC10KD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTO | |
5 | IRG4RC10KDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTO | |
6 | IRG4RC10KPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTO | |
7 | IRG4RC10U |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
8 | IRG4RC10UD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
9 | IRG4RC10UDPBF |
International Rectifier |
UltraFast CoPack IGBT | |
10 | IRG4RC10UPBF |
International Rectifier |
UltraFast speed IGBT | |
11 | IRG4RC20F |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
12 | IRG4RC20FPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |