PD - 97379 IRFP4768PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt a.
1.1Nxm) 770 See Fig. 14, 15, 22a, 22b
Units
A W W/°C V V/ns °C
Avalanche Characteristics
EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy d Avalanche Current c Repetitive Avalanche Energy c mJ A mJ
Thermal Resistance
Symbol
RθJC RθCS RθJA
Parameter
Junction-to-Case ij Case-to-Sink, Flat Greased Surface Junction-to-Ambient
Typ.
–
–
– 0.24
–
–
–
Max.
0.29
–
–
– 40
Units
°C/W
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1
02/26/09
IRFP4768PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS RG
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Te.
Application High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Swit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP4768 |
INCHANGE |
N-Channel MOSFET | |
2 | IRFP470 |
IXYS |
N-Channel MOSFET | |
3 | IRFP470 |
INCHANGE |
N-Channel MOSFET | |
4 | IRFP4710 |
International Rectifier |
ower MOSFET | |
5 | IRFP4710 |
INCHANGE |
N-Channel MOSFET | |
6 | IRFP4710PBF |
International Rectifier |
Power MOSFET | |
7 | IRFP4004 |
INCHANGE |
N-Channel MOSFET | |
8 | IRFP4004PbF |
International Rectifier |
Power MOSFET | |
9 | IRFP4110 |
INCHANGE |
N-Channel MOSFET | |
10 | IRFP4110PBF |
International Rectifier |
HEXFET Power MOSFET | |
11 | IRFP4127 |
INCHANGE |
N-Channel MOSFET | |
12 | IRFP4127PbF |
International Rectifier |
Power MOSFET |