IRFP4110PBF - International Rectifier

IRFP4110PBF HEXFET Power MOSFET

PD - 97311 IRFP4110PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET® Power MOSFET Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt.

Features

Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. 180c 130c 120 670 370 2.5 ± 20 5.3 -55 to + 175 300 10lbxin (1.1Nxm) Units A W W/°C V V/ns °C Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy e Avalanche Current d Repetitive Avalanche Energy g 190 108 37 mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case k Case-to-Sink, Flat Greased Surface Junction-to-Ambient j Typ.
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  – 0.24
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  –
  – Max. 0.402
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  – 40 Units °C/W www.irf.com 1 http://www.Datasheet4U.com 03/03/08 IRFP4110PbF Static @ TJ.