IRFP4004 - INCHANGE

IRFP4004 N-Channel MOSFET

isc N-Channel MOSFET Transistor IRFP4004，IIRFP4004 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.7mΩ ·Enhancement mode: Vth =2.0 to 4.0V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Pow.

Features

·Static drain-source on-resistance: RDS(on)≤1.7mΩ
·Enhancement mode: Vth =2.0 to 4.0V (VDS=VGS, ID=250μA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·High Efficiency Synchronous Rectification in SMPS
·Uninterruptible Power Supply
·High Speed Power Switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 195 IDM Drain Current-Single Pulsed 1390 PD Total Dissipation @TC=25℃ 380 Tj Max. Operating Junction T.