PD - 97323 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G IRFP4004P.
ring Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy e IAR Avalanche Current d EAR Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC Junction-to-Case k
RθCS RθJA
Case-to-Sink, Flat Greased Surface Junction-to-Ambient jk
www.irf.com
Max. 350c 250c 195 1390 380
2.5 ± 20 2.0 -55 to + 175
300
10lbxin (1.1Nxm)
290 See Fig. 14, 15, 22a, 22b
Typ.
–
–
– 0.24
–
–
–
Max. 0.40
–
–
– 40
Units A
W W/°C
V V/ns °C
mJ A mJ
Units °C/W
1
06/05/08
IRFP4004PbF
Static @ TJ .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP4004 |
INCHANGE |
N-Channel MOSFET | |
2 | IRFP4110 |
INCHANGE |
N-Channel MOSFET | |
3 | IRFP4110PBF |
International Rectifier |
HEXFET Power MOSFET | |
4 | IRFP4127 |
INCHANGE |
N-Channel MOSFET | |
5 | IRFP4127PbF |
International Rectifier |
Power MOSFET | |
6 | IRFP4137 |
INCHANGE |
N-Channel MOSFET | |
7 | IRFP4137PBF |
International Rectifier |
Power MOSFET | |
8 | IRFP4227 |
INCHANGE |
N-Channel MOSFET | |
9 | IRFP4227PBF |
International Rectifier |
Power MOSFET | |
10 | IRFP4227PBF |
INCHANGE |
N-Channel MOSFET | |
11 | IRFP4228PBF |
International Rectifier |
Power MOSFET | |
12 | IRFP4229 |
INCHANGE |
N-Channel MOSFET |