isc N-Channel MOSFET Transistor IRFP4768,IIRFP4768 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤17.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switchin.
·Static drain-source on-resistance:
RDS(on)≤17.5mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High Efficiency Synchronous Rectification in SMPS
·Uninterruptible Power Supply
·High Speed Power Switching
·Hard Switched And High Frequency Circuits
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
250
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
93
IDM
Drain Current-Single Pulsed
370
PD
Total Dissipation @TC=25℃
520
Tj
Max. Operating Junc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP4768PbF |
Infineon |
MOSFET | |
2 | IRFP4768PbF |
International Rectifier |
Power MOSFET | |
3 | IRFP470 |
IXYS |
N-Channel MOSFET | |
4 | IRFP470 |
INCHANGE |
N-Channel MOSFET | |
5 | IRFP4710 |
International Rectifier |
ower MOSFET | |
6 | IRFP4710 |
INCHANGE |
N-Channel MOSFET | |
7 | IRFP4710PBF |
International Rectifier |
Power MOSFET | |
8 | IRFP4004 |
INCHANGE |
N-Channel MOSFET | |
9 | IRFP4004PbF |
International Rectifier |
Power MOSFET | |
10 | IRFP4110 |
INCHANGE |
N-Channel MOSFET | |
11 | IRFP4110PBF |
International Rectifier |
HEXFET Power MOSFET | |
12 | IRFP4127 |
INCHANGE |
N-Channel MOSFET |