IRFP4110 - INCHANGE

IRFP4110 N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4110，IIRFP4110 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤4.5mΩ ·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in S.

Features

·Static drain-source on-resistance: RDS(on)≤4.5mΩ
·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·High Efficiency Synchronous Rectification in SMPS
·Uninterruptible Power Supply
·High Speed Power Switching
·Hard Switched And High Frequency Circuits
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 IDM Drain Current-Single Pulsed 670 PD Total Dissipation.