Gate Drain Source This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET ar.
l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175°C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability Key Parameters VDS min VDS (Avalanche) typ. RDS(ON) typ. @ 10V TJ max 250 300 29 175 V V m: °C DD G S .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP4332 |
INCHANGE |
N-Channel MOSFET | |
2 | IRFP4310Z |
INCHANGE |
N-Channel MOSFET | |
3 | IRFP4310ZPBF |
International Rectifier |
HEXFET Power MOSFET | |
4 | IRFP4321 |
INCHANGE |
N-Channel MOSFET | |
5 | IRFP4321PBF |
International Rectifier |
HEXFET Power MOSFET | |
6 | IRFP4368 |
INCHANGE |
N-Channel MOSFET | |
7 | IRFP4368PBF |
International Rectifier |
HEXFET Power MOSFET | |
8 | IRFP4004 |
INCHANGE |
N-Channel MOSFET | |
9 | IRFP4004PbF |
International Rectifier |
Power MOSFET | |
10 | IRFP4110 |
INCHANGE |
N-Channel MOSFET | |
11 | IRFP4110PBF |
International Rectifier |
HEXFET Power MOSFET | |
12 | IRFP4127 |
INCHANGE |
N-Channel MOSFET |