IRFP4332 - INCHANGE

IRFP4332 N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4332，IIRFP4332 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤33mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Repetitive Peak Current Capability for Reliable Operation ·Short fall & Rise Tim.

Features

·Static drain-source on-resistance: RDS(on)≤33mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·High Repetitive Peak Current Capability for Reliable Operation
·Short fall & Rise Times For Fast Switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 250 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 57 IDM Drain Current-Single Pulsed 230 PD Total Dissipation @TC=25℃ 360 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperatu.