IRFP4137 - INCHANGE

IRFP4137 N-Channel MOSFET

isc N-Channel MOSFET Transistor IRFP4137，IIRFP4137 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤69mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source .

Features

·Static drain-source on-resistance: RDS(on)≤69mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·High Speed Power Switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 300 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 38 IDM Drain Current-Single Pulsed 152 PD Total Dissipation @TC=25℃ 341 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rt.