IRFP4137 |
Part Number | IRFP4137 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor IRFP4137,IIRFP4137 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤69mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devi... |
Features |
·Static drain-source on-resistance: RDS(on)≤69mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 300 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 38 IDM Drain Current-Single Pulsed 152 PD Total Dissipation @TC=25℃ 341 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rt... |
Document |
IRFP4137 Data Sheet
PDF 237.77KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IRFP4137PBF |
International Rectifier |
Power MOSFET | |
2 | IRFP4110 |
INCHANGE |
N-Channel MOSFET | |
3 | IRFP4110PBF |
International Rectifier |
HEXFET Power MOSFET | |
4 | IRFP4127 |
INCHANGE |
N-Channel MOSFET | |
5 | IRFP4127PbF |
International Rectifier |
Power MOSFET |