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IRFP250 - Inchange Semiconductor

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IRFP250 N-Channel MOSFET Transistor

iscN-Channel MOSFET Transistor IRFP250 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤85mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL.

Features


·Low drain-source on-resistance: RDS(ON) ≤85mΩ @VGS=10V
·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pulsed 120 A PD Total Dissipation @TC=25℃ 190 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature.

The same part from a different manufacturer

Datasheet IRFP250 - ST Microelectronics IRFP250

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Datasheet IRFP250 - Vishay IRFP250

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized .

Datasheet IRFP250 - Fairchild IRFP250

Data Sheet January 2002 IRFP250 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon .

Datasheet IRFP250 - IXYS IRFP250

Standard Power MOSFET N-Channel Enhancement Mode IRFP 250 VDSS ID (cont) RDS(on) = 200 V = 30 A = 85 mΩ Symbol Test.

Datasheet IRFP250 - International Rectifier IRFP250

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