Features
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l International standard package JEDEC TO-247 AD
l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l High commutating dv/dt rating l Fast switching times
Symbol
VDSS V
GS(th)
IGSS IDSS
R DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
VGS = 0 V, ID = 250 µA
V DS
=
V, GS
I D
=
250
µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS V =0V
GS
TJ = 25°C
T J
=
125°C
V = 10 V, I = 18 A GS D
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
200 2
V 4V
±100 nA
25 µA 250 µA
0.085 Ω
Applications
l Switch-mode and resonant-mod...
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