These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited.
•
•
•
•
•
• 32A, 200V, RDS(on) = 0.085Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 75 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
!
●
◀
▲
●
●
G!
TO-3P
G DS
IRFP Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
IRFP250B 200 32 20.3 128 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltag.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP250 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | IRFP250 |
Fairchild |
N-Channel Power MOSFET | |
3 | IRFP250 |
ST Microelectronics |
N-CHANNEL MOSFET | |
4 | IRFP250 |
Vishay |
Power MOSFET | |
5 | IRFP250 |
International Rectifier |
Power MOSFET | |
6 | IRFP250 |
IXYS |
Power MOSFET | |
7 | IRFP250A |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | IRFP250A |
Fairchild |
Advanced Power MOSFET | |
9 | IRFP250M |
INCHANGE |
N-Channel MOSFET | |
10 | IRFP250MPbF |
Infineon |
MOSFET | |
11 | IRFP250MPBF |
International Rectifier |
Power MOSFET | |
12 | IRFP250N |
Inchange Semiconductor |
N-Channel MOSFET Transistor |