IRFP250A - Inchange Semiconductor

IRFP250A N-Channel MOSFET Transistor

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±20 V V ID Drain Current-Continuous 32 A IDM Drain Current-Single Pluse 128 A PD Total Dissipation @TC=25℃ 204 W TJ Max. Operating Junct.

Features

·Drain Current
  –ID= 32A@ TC=25℃
·Drain Source Voltage- : VDSS= 200V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max)
·Fast Switching DESCRIPTION
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±20 V V ID Drain Current-Continuous 32 A IDM Drain Current-Single Pluse 128 A PD Total Dissipation @TC=25℃ 204 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARAC.