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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP250N，IIRFP250N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Dr.
·Static drain-source on-resistance:
RDS(on)≤75mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
30
IDM
Drain Current-Single Pulsed
120
PD
Total Dissipation @TC=25℃
214
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Chann.
IRFP250N - IRF
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFP250 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | IRFP250 |
Fairchild |
N-Channel Power MOSFET |
|
| 3 | IRFP250 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 4 | IRFP250 |
Vishay |
Power MOSFET |
|
| 5 | IRFP250 |
International Rectifier |
Power MOSFET |
|
| 6 | IRFP250 |
IXYS |
Power MOSFET |
|
| 7 | IRFP250A |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | IRFP250A |
Fairchild |
Advanced Power MOSFET |
|
| 9 | IRFP250B |
Fairchild |
200V N-Channel MOSFET |
|
| 10 | IRFP250M |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IRFP250MPbF |
Infineon |
MOSFET |
|
| 12 | IRFP250MPBF |
International Rectifier |
Power MOSFET |
|