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IRFP250 |
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| Part Number | IRFP250 |
| Manufacturer | Fairchild |
| Description | Data Sheet January 2002 IRFP250 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, ... |
| Features |
• 33A, 200V • rDS(ON) = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (TAB) ©2002 Fairchild Semiconductor Corporation IRFP250 Rev. B IRFP250 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFP250 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . .... |
| Document |
 IRFP250 Data Sheet
PDF 97.59KB |
| Distributor | Stock | Price | Buy |
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