IRFD220 N-Channel Power MOSFET Datasheet

IRFD220 N-Channel Power MOSFET

IRFD220 Data Sheet January 2002 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications suc.

Features

• 0.8A, 200V
• rDS(ON) = 0.800Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFD220 PACKAGE HEXDIP BRAND IRFD220 Symbol D NOTE: When ordering, use the entire part number. G S Packaging HEXDIP DRAIN GATE SOURCE ©2002 Fairchild Semiconductor Corporation IRFD220 Rev. B IRFD220 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed IRFD220 20.

The same part from a different manufacturer

IRFD220 - Intersil Corporation

IRFD220 Data Sheet July 1999 File Number 2317.3 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancemen.

IRFD220 - International Rectifier

IRFD220 - GE

~D~~U FIELD EFFECT POWER TRANSISTOR IRFD220,221 D82CN2,M2 0.8 AMPERES 200, 150 VOLTS RDS(ON) = 0.8 il This series of N.

Related Product

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1	IRFD220PBF	International Rectifier	Power MOSFET
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3	IRFD222	GE	FIELD EFFECT POWER TRANSISTOR
4	IRFD223	GE	FIELD EFFECT POWER TRANSISTOR
5	IRFD224	International Rectifier	Power MOSFET
6	IRFD210	Intersil Corporation	N-Channel Power MOSFET
7	IRFD210	International Rectifier	Power MOSFET
8	IRFD210	GE	FIELD EFFECT POWER TRANSISTOR
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10	IRFD211	GE	FIELD EFFECT POWER TRANSISTOR
11	IRFD212	GE	FIELD EFFECT POWER TRANSISTOR
12	IRFD213	IOR	N-Channel Transistor

IRFD220 - Fairchild Semiconductor