Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
~~D~~ FIELD EFFECT POWER TRANSISTOR IRFD222,223 0.7 AMPERES 200, 150 VOLTS RDS(ON) =.1.20 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applicatio.
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
N-CHANNEL
CASE STYLE 4-PIN DIP
DIMENSIONS ARE I.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFD220 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 2 | IRFD220 |
International Rectifier |
Power MOSFET |
|
| 3 | IRFD220 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 4 | IRFD220 |
GE |
FIELD EFFECT POWER TRANSISTOR |
|
| 5 | IRFD220PBF |
International Rectifier |
Power MOSFET |
|
| 6 | IRFD221 |
GE |
FIELD EFFECT POWER TRANSISTOR |
|
| 7 | IRFD222 |
GE |
FIELD EFFECT POWER TRANSISTOR |
|
| 8 | IRFD224 |
International Rectifier |
Power MOSFET |
|
| 9 | IRFD210 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 10 | IRFD210 |
International Rectifier |
Power MOSFET |
|
| 11 | IRFD210 |
GE |
FIELD EFFECT POWER TRANSISTOR |
|
| 12 | IRFD210PBF |
International Rectifier |
HEXFET Power MOSFET |
|