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IRFD213 - GE
~~D~[F~ FIELD EFFECT POWER TRANSISTOR IRFD212,213 0.45 AMPERES 200, 150 VOLTS RDS(ON) = 2.4 il This series ofN-Channel.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFD210 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 2 | IRFD210 |
International Rectifier |
Power MOSFET |
|
| 3 | IRFD210 |
GE |
FIELD EFFECT POWER TRANSISTOR |
|
| 4 | IRFD210PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 5 | IRFD211 |
GE |
FIELD EFFECT POWER TRANSISTOR |
|
| 6 | IRFD212 |
GE |
FIELD EFFECT POWER TRANSISTOR |
|
| 7 | IRFD214 |
International Rectifier |
Power MOSFET |
|
| 8 | IRFD214 |
Vishay |
Power MOSFET |
|
| 9 | IRFD220 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 10 | IRFD220 |
International Rectifier |
Power MOSFET |
|
| 11 | IRFD220 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 12 | IRFD220 |
GE |
FIELD EFFECT POWER TRANSISTOR |
|
