IRFD211 - GE

IRFD211 FIELD EFFECT POWER TRANSISTOR

~~D~[P~U FIELD EFFECT POWER TRANSISTOR IRFD21 0,211 D82BN2,M2 0.6 AMPERES 200, 150 VOLTS RDS(ON) = 1.5 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most swit.

Features

• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling N-CHANNEL CASE STYLE 4-PIN DIP .