IRFD221 - GE

IRFD221 FIELD EFFECT POWER TRANSISTOR

~D~~U FIELD EFFECT POWER TRANSISTOR IRFD220,221 D82CN2,M2 0.8 AMPERES 200, 150 VOLTS RDS(ON) = 0.8 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switchin.

Features

• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling N-CHANNEL CASE STYLE 4-PIN DIP DIME.