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IRFD220 |
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| Part Number | IRFD220 |
| Manufacturer | Intersil Corporation |
| Description | IRFD220 Data Sheet July 1999 File Number 2317.3 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET des... |
| Features |
• 0.8A, 200V • rDS(ON) = 0.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFD220 PACKAGE HEXDIP BRAND IRFD220 Symbol D NOTE: When ordering, use the entire part number. G S Packaging HEXDIP DRAIN GATE SOURCE 4-287 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 4... |
| Document |
 IRFD220 Data Sheet
PDF 51.94KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFD220 |
International Rectifier |
Power MOSFET |
|
| 2 | IRFD220 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 3 | IRFD220 |
GE |
FIELD EFFECT POWER TRANSISTOR |
|
| 4 | IRFD220PBF |
International Rectifier |
Power MOSFET |
|
| 5 | IRFD221 |
GE |
FIELD EFFECT POWER TRANSISTOR |
|