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isc N-Channel MOSFET Transistor IRF1010EZ，IIRF1010EZ ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATING.
·Static drain-source on-resistance:
RDS(on) ≤8.5mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
60
IDM
Drain Current-Single Pulsed
340
PD
Total Dissipation @TC=25℃
140
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W.
IRF1010EZ - International Rectifier
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques t.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF1010E |
International Rectifier |
Power MOSFET |
|
| 2 | IRF1010E |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRF1010EL |
International Rectifier |
Power MOSFET |
|
| 4 | IRF1010ELPbF |
International Rectifier |
HEXFET Power MOSFET |
|
| 5 | IRF1010EPBF |
International Rectifier |
Power MOSFET |
|
| 6 | IRF1010ES |
International Rectifier |
Power MOSFET |
|
| 7 | IRF1010ES |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IRF1010ESPbF |
International Rectifier |
HEXFET Power MOSFET |
|
| 9 | IRF1010EZL |
International Rectifier |
AUTOMOTIVE MOSFET |
|
| 10 | IRF1010EZLPbF |
International Rectifier |
POWER MOSFET |
|
| 11 | IRF1010EZPbF |
International Rectifier |
POWER MOSFET |
|
| 12 | IRF1010EZS |
International Rectifier |
AUTOMOTIVE MOSFET |
|